๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The effect of argon during the plasma-assisted chemical vapor deposition of TiN

โœ Scribed by M.R. Hilton; M. Salmeron; G.A. Somorjai

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
282 KB
Volume
167
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Microstructures of diamond formed by pla
Microstructures of diamond formed by plasma-assisted chemical vapor deposition
โœ J.L. Kaae; P.K. Gantzel; J. Chin; W.P. West ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 92 KB

We have investi ated the effects of reactant residence time on the properties of microwav+a88isted CV % diamond films. Using a constant process pressure of 40 Torr and gas composition of 1% CHb in Hr? the total gas flow rate was adjusted from 25 to 800 seem. For OUT reactor, this correspond8 to res