Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process
โฆ LIBER โฆ
The structure and optical properties of silicon nanowires prepared by inductively coupled plasma chemical vapor deposition
โ Scribed by Yanli Qin; Fei Li; Dequan Liu; Hengqing Yan; Jinxiao Wang; Deyan He
- Book ID
- 113794253
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 907 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0167-577X
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