Chemical bonding and composition of sili
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M. Matsuoka; S. Isotani; W. Sucasaire; L.S. Zambom; K. Ogata
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Article
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2010
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Elsevier Science
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English
โ 560 KB
Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process