Study on Characteristic Properties of Annealed SiOC Film Prepared by Inductively Coupled Plasma Chemical Vapor Deposition
โ Scribed by Oh, T.; Chy Hyung Kim
- Book ID
- 114667312
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 186 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0093-3813
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๐ SIMILAR VOLUMES
Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process
We report in-situ plasma diagnostics during the deposition of low dielectric constant SiOC(-H) thin films on p-Si(100) substrates by using plasma enhanced chemical vapor deposition with dimethyldimethoxysilane (DMDMS, C 4 H 12 O 2 Si) and oxygen gas as precursors. The bulk plasma was characterized b