Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures
โ Scribed by Mikhailova, M. P.; Moiseev, K. D.; Voronina, T. I.; Lagunova, T. S.; Yakovlev, Yu. P.
- Book ID
- 121268082
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 470 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0021-8979
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๐ SIMILAR VOLUMES
We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures.
Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3-5 m at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on InAs surface. I-V characteristics behavior was discuss