Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions

✍ Scribed by M.P. Mikhailova; T.I. Voronina; T.S. Lagunova; K.D. Moiseev; S.A. Obukhov; A.E. Rozov; Yu.P. Yakovlev

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 81 KB
• Volume: 24
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0216

✦ Synopsis

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures. Interface roughness scattering was found to dominate the electron mobility at T = 4.2-47 K in samples with an undoped or a slightly doped quaternary layer. A drastic mobility drop with increasing Zn doping level was observed. Shubnikov-de Haas oscillations at low temperatures (1.5-20 K) were studied and a weak anisotropy of magnetoresistance was found. Some important parameters of the heterostructures under study were determined.