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Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface

โœ Scribed by Maya P. Mikhailova; Konstantin D. Moiseev; Tamara I. Voronina; Tamara S. Lagunova; Robert V. Parfeniev; Yury P. Yakovlev

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
219 KB
Volume
404
Category
Article
ISSN
0921-4526

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Electron channel with high carrier mobil
Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions
โœ M.P. Mikhailova; T.I. Voronina; T.S. Lagunova; K.D. Moiseev; S.A. Obukhov; A.E. ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 81 KB

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures.