Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface
โ Scribed by K. D. Moiseev; A. A. Sitnikova; N. N. Faleev; Yu. P. Yakovlev
- Book ID
- 110125527
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 149 KB
- Volume
- 34
- Category
- Article
- ISSN
- 1063-7826
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๐ SIMILAR VOLUMES
Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3-5 m at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on InAs surface. I-V characteristics behavior was discuss
We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures.