Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

✍ Scribed by Konstantin Moiseev; Eduard Ivanov; Vyacheslav Romanov; Maya Mikhailova; Yury Yakovlev; Eduard Hulicius; Alica Hospodková; Jiri Pangrác; Tomislav Šimeček

• Publisher: Elsevier
• Year: 2010
• Tongue: English
• Weight: 294 KB
• Volume: 3
• Category: Article
• ISSN: 1875-3892
• DOI: 10.1016/j.phpro.2010.01.161

✦ Synopsis

Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3-5 m at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on InAs surface. I-V characteristics behavior was discussed using the tunneling-assisted current transport mechanism through surface states. Redistribution between the interband (h 1 =0.36 eV) and interface (h 2 =0.31 eV) emission bands in electroluminescent spectra at reverse bias was found in dependence on Fermi level position pinning by surface states at the type II broken-gap heterointerface.