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Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

โœ Scribed by Berezovets, V. A. ;Mikhailova, M. P. ;Moiseev, K. D. ;Parfeniev, R. V. ;Yakovlev, Yu. P. ;Nizhankovskii, V. I.

Book ID
105362173
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
47 KB
Volume
195
Category
Article
ISSN
0031-8965

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๐Ÿ“œ SIMILAR VOLUMES

Electron channel with high carrier mobil
Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions
โœ M.P. Mikhailova; T.I. Voronina; T.S. Lagunova; K.D. Moiseev; S.A. Obukhov; A.E. ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 81 KB

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga 1-x In x AsSb/ p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures.