𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Interface instability and cell formation in ion‐implanted and laser‐annealed silicon

✍ Scribed by Narayan, J.


Book ID
121847219
Publisher
American Institute of Physics
Year
1981
Tongue
English
Weight
629 KB
Volume
52
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Laser annealing of nitrogen and oxigen i
✍ G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini 📂 Article 📅 1979 🏛 Elsevier Science ⚖ 192 KB

Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of