Laser annealing of nitrogen and oxigen i
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G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini
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Article
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1979
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Elsevier Science
β 192 KB
Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of