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Rapid Thermal Annealing of Arsenic-Ion Implanted Layers in Silicon Investigated by Electrochemical Capacitance-Voltage Measurements

✍ Scribed by Sieber, N. ;Otto, G. ;Syhre, H.

No coin nor oath required. For personal study only.

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Chemical bonding and interface analysis

✍ A. Markwitz; H. Baumann; E. F. Krimmel; R. W. Michelmann; C. Maurer; E. C. Palou 📂 Article 📅 1994 🏛 Springer 🌐 English ⚖ 443 KB