𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Laser annealing of ion-implanted NiSi layers

✍ Scribed by Kaschner, C. ;Witzmann, A. ;Gärtner, K. ;Götz, G.

Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
326 KB
Volume
94
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Laser annealing of nitrogen and oxigen i
Laser annealing of nitrogen and oxigen ion implanted silicon layers
✍ G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini 📂 Article 📅 1979 🏛 Elsevier Science ⚖ 192 KB

Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of