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Photoluminescence evolution in self-ion-implanted and annealed silicon

โœ Scribed by Yu, Yang; Chong, Wang; Rui-Dong, Yang; Liang, Li; Fei, Xiong; Ji-Ming, Bao

Book ID
120839353
Publisher
IOP Publishing
Year
2009
Tongue
English
Weight
800 KB
Volume
18
Category
Article
ISSN
1674-1056

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Atomistic simulation of defects evolutio
Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation
โœ Min Yu; Ru Huang; Xing Zhang; Yangyuan Wang; Kunihiro Suzuki; Hideki Oka ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 278 KB

Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)