✦ LIBER ✦

Interdiffusion at Si/SiGe interface analyzed by high-resolution X-ray diffraction

✍ Scribed by Shuqi Zheng; M. Kawashima; M. Mori; T. Tambo; C. Tatsuyama

Book ID: 108289135
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 528 KB
Volume: 508
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.08.416

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of interface roughness

Characterization of interface roughness in W/Si multilayers by high resolution diffuse X-ray scattering

✍ T. Salditt; D. Lott; T.H. Metzger; J. Peisl; G. Vignaud; J.F. Legrand; G. Grübel 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 412 KB

High resolution X-ray diffraction of GaN

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

✍ N. Chaaben; T. Boufaden; A. Fouzri; M.S. Bergaoui; B. El Jani 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 643 KB

Structural characterization of Si1 −xGex

Structural characterization of Si1 −xGexultrathin quantum wells in a Si matrix by high-resolution X-ray diffraction

✍ A. M. Afanas’ev; M. A. Chuev; R. M. Imamov; É. Kh. Mukhamedzhanov; M. M. Rzaev; 📂 Article 📅 2002 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 68 KB

Strain relief process at highly strained

Strain relief process at highly strained semiconductor heterointerfaces studied by high-resolution X-ray diffraction

✍ L. Tapfer; G.E. Crook; O. Brandt; K. Ploog 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Strain and relaxation in Si-MBE structur

Strain and relaxation in Si-MBE structures studied by reciprocal space mapping using high resolution X-ray diffraction

✍ G. V. Hansson; H. H. Radamsson; Wei-Xin Ni 📂 Article 📅 1995 🏛 Springer US 🌐 English ⚖ 655 KB

High resolution X-ray diffraction measurements have been done on Si(001)-based structures grown by molecular beam epitaxy (MBE). By systematically varying the angle of incidence and the diffraction angle, the diffraction intensity data can be displayed in a two-dimensional X-ray diffraction intensit

Interface Stability and Silicide Formati

Interface Stability and Silicide Formation in High Temperature Stable MoxSi1−x/Si Multilayer Soft X-Ray Mirrors Studied by Means of X-Ray Diffraction and HRTEM

✍ Kleineberg, U. ;Stock, H.-J. ;Kloidt, A. ;Schmiedeskamp, B. ;Heinzmann, U. ;Hopf 📂 Article 📅 1994 🏛 John Wiley and Sons 🌐 English ⚖ 837 KB