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High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

✍ Scribed by N. Chaaben; T. Boufaden; A. Fouzri; M.S. Bergaoui; B. El Jani

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 643 KB
Volume: 253
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2006.05.128

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High resolution X-ray diffraction of GaN grown on Si (1&#xa0;1&#xa0;1) by MOVPE

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE