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Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

โœ Scribed by H. Fitouri; I. Moussa; A. Rebey; B. El Jani


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
483 KB
Volume
88
Category
Article
ISSN
0167-9317

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Effect of substrate temperature on growt
โœ Hiroyuki Usui; Hidehiro Yasuda; Hirotaro Mori ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 904 KB

Effect of substrate temperature on growth process were studied for GaAs on Si(1 1 0) vicinal surface by reflection high-energy electron diffraction. At the substrate temperature of 473 K, three-dimensional islands of misoriented GaAs are formed on the vicinal surface. At 573 K, three-dimensional GaA