✦ LIBER ✦

Effect of substrate temperature on growth process of GaAs on Si(1 1 0) vicinal surface studied by reflection high-energy electron diffraction

✍ Scribed by Hiroyuki Usui; Hidehiro Yasuda; Hirotaro Mori

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 904 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.10.045

No coin nor oath required. For personal study only.

✦ Synopsis

Effect of substrate temperature on growth process were studied for GaAs on Si(1 1 0) vicinal surface by reflection high-energy electron diffraction. At the substrate temperature of 473 K, three-dimensional islands of misoriented GaAs are formed on the vicinal surface. At 573 K, three-dimensional GaAs islands with low density epitaxially grow at the step edges of the vicinal surface. At 673 K, twodimensional GaAs layer flattens the vicinal surface. The kinetics of Ga adatoms diffusing on the vicinal surface can explain the change in the growth process, which depends on the substrate temperature.

📜 SIMILAR VOLUMES

Observation of Si(1 1 1)-&#xa0

Observation of Si(1 1 1)- × -Ag surface at room temperature by reflection high-energy positron diffraction

✍ Y. Fukaya; A. Kawasuso; K. Hayashi; A. Ichimiya 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 164 KB

Surface structure and phase transition o

Surface structure and phase transition of Ge(1 1 1)-3 × 3-Pb studied by reflection high-energy positron diffraction

✍ Y. Fukaya; M. Hashimoto; A. Kawasuso; A. Ichimiya 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 429 KB

Precise determination of surface Debye-t

Precise determination of surface Debye-temperature of Si(1 1 1)-7 × 7 surface by reflection high-energy positron diffraction

✍ Y. Fukaya; A. Kawasuso; K. Hayashi; A. Ichimiya 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 115 KB

Temperature dependent low energy electro

Temperature dependent low energy electron microscopy study of Ge growth on Si(1 1 3)

✍ T. Clausen; Th. Schmidt; J.I. Flege; A. Locatelli; T.O. Mentes; S. Heun; F.Z. Gu 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 381 KB

Study of GaAsBi MOVPE growth on (1 

Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

✍ H. Fitouri; I. Moussa; A. Rebey; B. El Jani 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 483 KB

Effects of carbonization and substrate t

Effects of carbonization and substrate temperature on the growth of 3C–SiC on Si(1 1 1) by SSMBE

✍ Zhongliang Liu; Jinfeng Liu; Peng Ren; Yuyu Wu; Pengshou Xu 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 438 KB

Effect of substrate temperature on growth process of GaAs on Si(1&#xa0;1&#xa0;0) vicinal surface studied by reflection high-energy electron diffraction

✦ Synopsis

Effect of substrate temperature on growth process of GaAs on Si(1 1 0) vicinal surface studied by reflection high-energy electron diffraction