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Interband transitions of Al0.35Ga0.65As/GaAs multiple quantum wells

✍ Scribed by Y. T. Oh; T. W. Kang; T. W. Kim

Publisher
Springer
Year
1995
Tongue
English
Weight
261 KB
Volume
14
Category
Article
ISSN
0261-8028

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πŸ“œ SIMILAR VOLUMES

Localization in highly strained In0.35Ga
Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells
✍ J. Martinez-Pastor; F. AgullΓ³-Rueda; A. Vinattieri; F. Meseguer; J. SΓ‘nchez-Dehe πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 358 KB

We have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents. From photoluminescence experiments we observe an enhancement of the continuum density of states of quantum wells with large In content ( \(x=0.35\) ). We asso