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Central barrier width effects on the electron Landé factor in GaAs–Ga0.65Al0.35As double quantum wells

✍ Scribed by J. Darío Perea; J.R. Mejía-Salazar; N. Porras-Montenegro

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
227 KB
Volume
43
Category
Article
ISSN
1386-9477

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Spatially Indirect Excitons in GaAs/Al0.
Spatially Indirect Excitons in GaAs/Al0.35Ga0.65As Double Quantum Wells in the Presence of In-Plane Magnetic Fields
✍ Parlangeli, A. ;Christianen, P.C.M. ;Maan, J.C. ;Soerensen, C.B. ;Lindelof, P.E. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB 👁 1 views

We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect