Quantum dot lasers grown by gas source m
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Q. Gong; P. Chen; S.G. Li; Y.F. Lao; C.F. Cao; C.F. Xu; Y.G. Zhang; S.L. Feng; C
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Article
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2011
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Elsevier Science
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English
β 262 KB
We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More