We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More
β¦ LIBER β¦
InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy
β Scribed by H.D. Yang; Q. Gong; S.G. Li; C.F. Cao; C.F. Xu; P. Chen; S.L. Feng
- Book ID
- 108166145
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 438 KB
- Volume
- 312
- Category
- Article
- ISSN
- 0022-0248
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