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(InAs)m(GaAs)n superlattices grown by molecular beam epitaxy

โœ Scribed by Y. Matsui; H. Hayashi; M. Takahashi; K. Kikuchi; K. Yoshida


Book ID
107789689
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
231 KB
Volume
71
Category
Article
ISSN
0022-0248

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Raman scattering in InxGa1โˆ’xAs/GaAs supe
โœ M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persi ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 395 KB

The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt