Raman scattering in InxGa1−xAs/GaAs superlattices grown by molecular beam epitaxy

✍ Scribed by M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persio

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 395 KB
• Volume: 20
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90399-8

✦ Synopsis

The pseudomorphic In x Ga 1 _ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the optical lattice modes of a series of InxGa 1 _xAs/GaAs strainedlayer superlattices grown by molecular beam epitaxy on the (001) surface of GaAs substrates. The frequency shifts between strained and strain-free layers give a quantitative determination of strain in each type of layer. For this purpose, we measured the Raman phonon frequencies of bulk Inx Ga 1 -x As alloy samples for a large range of composition. Doublecrystal X-ray rocking curve (XRC) data for superlattices are compared with those of Raman experiments. This allows a more valid estimation of the obtained results.