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Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy

✍ Scribed by Z. Sobiesierski; D.I. Westwood; R.H. Williams


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
289 KB
Volume
5
Category
Article
ISSN
0921-5107

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📜 SIMILAR VOLUMES


Raman scattering in InxGa1−xAs/GaAs supe
✍ M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persi 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 395 KB

The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt