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Photoluminescence of the residual shallow acceptor in InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy

✍ Scribed by Zhong-Ying Xu; Ji-Zong Xu; T.G. Andersson; Zong-Gui Chen


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
269 KB
Volume
70
Category
Article
ISSN
0038-1098

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