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The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

✍ Scribed by H.S. Hansen; A. Bensaoula; S. Tougaard; A. Ignatiev


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
868 KB
Volume
116
Category
Article
ISSN
0022-0248

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