𝔖 Bobbio Scriptorium
✦   LIBER   ✦

GaSb quantum rings grown by metal organic molecular beam epitaxy

✍ Scribed by S. Odashima; S. Sakurai; M. Wada; I. Suemune


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
384 KB
Volume
323
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Low angle incidence microchannel epitaxy
✍ Chia-Hung Lin; Ryota Abe; Takahiro Maruyama; Shigeya Naritsuka πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 414 KB

GaN was grown by low angle incidence microchannel epitaxy (LAIMCE) using NH 3 -based metal-organic molecular beam epitaxy (NH 3 -based MOMBE). The growth mechanism was studied by varying the growth temperature and time. The effect of the incidence direction of precursors on lateral growth was also i

Quantum dot lasers grown by gas source m
✍ Q. Gong; P. Chen; S.G. Li; Y.F. Lao; C.F. Cao; C.F. Xu; Y.G. Zhang; S.L. Feng; C πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 262 KB

We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More