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Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

✍ Scribed by M. Henini

Publisher
Springer-Verlag
Year
2006
Tongue
English
Weight
873 KB
Volume
1
Category
Article
ISSN
1931-7573

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We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More