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Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon

✍ Scribed by Kaupo Kukli; Mikko Ritala; Teet Uustare; Jaan Aarik; Katarina Forsgren; Timo Sajavaara; Markku Leskelä; Anders Hårsta

Book ID: 108388406
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 134 KB
Volume: 410
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(02)00272-9

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## Abstract The growth of ultra‐thin Ta‐N films using atomic layer deposition (ALD) is investigated by in‐situ X‐ray photoelectron spectroscopy (XPS) starting from the first precursor pulse, as precursor substances __tert__‐butylimido‐tris(diethylamido)tantalum (TBTDET) and __tert__‐butylimido‐bis(