## Abstract We deposited ZnO thin films by atomic layer deposition (ALD) and then investigated the chemical and electrical characteristics after plasma treatment. The chemical bonding states were examined by Xβray photoelectron spectroscopy (XPS). The XPS spectra of O 1s showed that the intensity o
Influence of oxygen depletion layer on the properties of tin oxide gas-sensing films fabricated by atomic layer deposition
β Scribed by Gomathi Natarajan; David C. Cameron
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 605 KB
- Volume
- 95
- Category
- Article
- ISSN
- 1432-0630
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Aluminum oxide (Al 2 O 3 ) films were produced on n-type (001) Si, SiO 2 and polyimide (PI) substrates by atomic layer deposition method (ALD). The surface morphologies of the coatings were characterized by XRD and AFM, respectively. The adhesive properties of the deposits were investigated as a fun
## Abstract By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO~2~ using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)~2~] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained