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Influence of nitrogen concentration on grain growth, structural and electrical properties of sputtered aluminum nitride films

✍ Scribed by J.P. Kar; G. Bose; S. Tuli


Book ID
113896040
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
701 KB
Volume
54
Category
Article
ISSN
1359-6462

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Effect of nitrogen flow ratio on the str
✍ Shinho Cho πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 674 KB

Aluminum nitride (AlN) films have been deposited on glass substrates at various nitrogen flow ratios by rf reactive magnetron sputtering. The AlN film deposited at 10% of nitrogen flow ratio shows a strongly c-axis preferred orientation with a crystalline size of 100 nm, thickness of 1100 nm, and ba