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Effect of nitrogen concentration to the structural, chemical and electrical properties of tantalum zirconium nitride films

✍ Scribed by Z.Z. Tang

Book ID
113529277
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
492 KB
Volume
38
Category
Article
ISSN
0272-8842

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Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 Β°C in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer