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Influence of finite semiconductor thickness on thin film transistor characteristics

โœ Scribed by H.J. Pauwels; M. Burgelman

Book ID
107862087
Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
669 KB
Volume
27
Category
Article
ISSN
0040-6090

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Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent