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On the Characteristics of CMOS Transistors in Thick SOI Films

โœ Scribed by Banisch, R. ;Tillacr, B. ;Richtek, H. H. ;Huhger, B. ;Barna, P. ;Schiller, V. ;Adam, A. ;Gyulai, J.

Book ID
105381187
Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
318 KB
Volume
112
Category
Article
ISSN
0031-8965

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InGaZnO thin-film-transistors (TFTs) with various channel thicknesses were fabricated with a bottom gate configuration on SiO 2 /p-Si substrates at room temperature by radio frequency magnetron sputtering. The thickness of the InGaZnO channel layer ranged from 20 to 200 nm and the width/length ratio