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Theoretical influence of surface states and bulk traps on thin film transistor characteristics

✍ Scribed by A. van Calster; H.J. Pauwels


Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
681 KB
Volume
18
Category
Article
ISSN
0038-1101

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Evaluation of trap states at front and b
✍ Mutsumi Kimura πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 756 KB

## Abstract The trap states at the front and back oxide interfaces and grain boundaries of polycrystalline silicon thin‐film transistors are evaluated by using electrical characteristic analysis and device simulation. First, the method for extracting the trap densities of the front and back oxide i