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Influence of an epitaxial Si capping of Ge islands on Si(0 0 1) and Si(1 1 0) by LPCVD

✍ Scribed by P. Ferrandis; L. Vescan; B. Holländer; V. Dashtizadeh; C. Dieker

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 70 KB
Volume: 17
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00853-6

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