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Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature

✍ Scribed by Torabi, A.; Hoke, W. E.; Mosca, J. J.; Siddiqui, J. J.; Hallock, R. B.; Kennedy, T. D.

Book ID: 127129694
Publisher: AVS (American Vacuum Society)
Year: 2005
Tongue: English
Weight: 834 KB
Volume: 23
Category: Article
ISSN: 0734-211X
DOI: 10.1116/1.1914821

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