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Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer

✍ Scribed by Man Shrestha, Niraj; Li, Yiming; Chang, Edward Yi

Book ID: 125525009
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 984 KB
Volume: 53
Category: Article
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.04EF08

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