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Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

✍ Scribed by Simin, G.; Koudymov, A.; Tarakji, A.; Hu, X.; Yang, J.; Khan, M. Asif; Shur, M. S.; Gaska, R.

Book ID: 120400594
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 426 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1412282

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