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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

✍ Scribed by H. Hasegawa; T. Inagaki; S. Ootomo; T. Hashizume

Book ID: 121795917
Publisher: AVS (American Vacuum Society)
Year: 2003
Tongue: English
Weight: 619 KB
Volume: 21
Category: Article
ISSN: 0734-211X
DOI: 10.1116/1.1589520

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