InAs nanostructure grown with different growth rate in InAlAs matrix on InP (0 0 1) substrate
β Scribed by F.A Zhao; J Wu; P Jin; B Xu; Z.G Wang; C.L Zhang
- Book ID
- 108240698
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 243 KB
- Volume
- 23
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
InAs nanostructures on InAlAs=InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrare
Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-w