Anti-correlated vertical self-organization of InAs nanowires in stacked structures on InP(0 0 1) with InAlAs spacer layer
β Scribed by M. Gendry; J. Brault; B. Salem; G. Bremond; O. Marty
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 236 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
InAs nanostructures on InAlAs=InP(0 0 1) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrare
Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-w