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In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy

✍ Scribed by J. Zhang; A.K. Lees; A.G. Taylor; D. Raisbeck; N. Shukla; J.M. Fernández; B.A. Joyce; M.E. Pemble

No coin nor oath required. For personal study only.

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