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Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)

✍ Scribed by J. Zhang; A.G. Taylor; J.M. Fernández; B.A. Joyce; A.R. Turner; M.E. Pemble

No coin nor oath required. For personal study only.

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