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The characterization of the growth of sub-monolayer coverages (1200th to 1 monolayer) of Si and Be on GaAs(001): A reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study

✍ Scribed by D.A. Woolf; K.C. Rose; S.J. Morris; D.I. Westwood; J. Rumberg; F. Reinhardt; W. Richter; R.H. Williams


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
394 KB
Volume
150
Category
Article
ISSN
0022-0248

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