Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs

✍ Scribed by Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R. S. Gupta

• Book ID: 102520377
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 310 KB
• Volume: 52
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.25022

✦ Synopsis

Abstract

A new device design laterally asymmetric channel gate stack (LACGAS) SGT is proposed, and its impact on device performance is examined. By using analytical modeling and numerical simulations, the novel features of this structure are studied, and it is demonstrated that LACGAS offers superior performance when compared with conventional devices. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 746–750, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25022