## Abstract In this article, device characteristics of gate material engineeredβtrapezoidal recessed channel (GMEβTRC) MOSFET are investigated using device simulators, ATLAS and DEVEDIT. Further, proposed device is examined for cutoff frequency (__F__~T~) and parasitic capacitances, and result offe
β¦ LIBER β¦
Influence of Channel and Gate Engineering on the Analog and RF Performance of DG MOSFETs
β Scribed by Mohankumar, N.; Syamal, B.; Sarkar, C.K.
- Book ID
- 114619921
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 397 KB
- Volume
- 57
- Category
- Article
- ISSN
- 0018-9383
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