Impact of Forming Gas Annealing on the Performance of Surface-Channel MOSFETs With an ALD Gate Dielectric

✍ Scribed by Djara, V.; Cherkaoui, K.; Schmidt, M.; Monaghan, S.; O'Connor, E.; Povey, I.M.; O'Connell, D.; Pemble, M.E.; Hurley, P.K.

• Book ID: 114620898
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 795 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2012.2185242